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 BM2301
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
-20
rDS(on) (W)
0.130 @ VGS = -4.5 V 0.190 @ VGS = -2.5 V
ID (A)
-2.3 -1.9
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2301DS (A1)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
-20 "8 -2.3 -1.5
Unit
V
A -10 -1.6 1.25 W 0.8 -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. RthJA RthJA 166
Symbol
Limit
100
Unit
_C/W _C/W
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BM2301
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -4.5 V VDS v -5 V, VGS = -2.5 V VGS = -4.5 V, ID = -2.8 A Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltage rDS( ) DS(on) gfs VSD VGS = -2.5 V, ID = -2.0 A VDS = -5 V, ID = -2.8 A IS = -1.6 A, VGS = 0 V -6 A -3 0.105 0.145 6.5 -0.80 -1.2 0.130 W 0.190 S V -20 V -0.45 "100 -1 -10 nA mA
Symbol
Test Conditions
Min
Typ
Max
Unit
On-State Drain Currenta
ID(on)
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -6 V VGS = 0, f = 1 MHz 6 V, 0 MH VDS = -6 V VGS = -4.5 V 6 V, 45 ID ^ -2.8 A 2.8 5.8 0.85 1.70 415 223 87 pF F 10 nC C
Switchingc
Turn-On Time td(on) tr Turn-Off Time td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. VDD = -6 V RL = 6 W 6 V, ID ^ -1.0 A, VGEN = -4.5 V RG = 6 W 13.0 36.0 42 34 25 60 ns 70 60
BM2301
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
Output Characteristics
VGS = 5, 4.5, 4, 3.5, 3 V
10
Transfer Characteristics
8 I D - Drain Current (A)
2.5 V I D - Drain Current (A)
8
TC = -55_C
25_C 6 125_C 4
6
4
2V
2
0, 0.5, 1 V
2 1.5 V 0
0 0 1 2 3 4 5
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6 1000
Capacitance
0.5 r DS(on)- On-Resistance ( W ) C - Capacitance (pF)
800
0.4
600 Ciss 400 Coss Crss 200
0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1
0 0 2 4 6 8 10
0 0 3 6 9 12
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
5 VDS = 6 V ID = 2.8 A V GS - Gate-to-Source Voltage (V) 4
Gate Charge
1.8
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 2.8 A
1.6 r DS(on)- On-Resistance ( W ) (Normalized)
1.4
3
1.2
2
1.0
1
0.8
0 0 2 4 6 8
0.6 -50
0
50
100
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
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2-3
BM2301
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10 0.6
On-Resistance vs. Gate-to-Source Voltage
0.5 r DS(on)- On-Resistance ( W ) I S - Source Current (A)
TJ = 150_C
0.4
0.3
ID = 2.8 A
TJ = 25_C
0.2
0.1
1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0 0 2 4 6 8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4 14 12 10 Power (W) 8 6 4 -0.1 2 0 0 50 TJ - Temperature (_C) 100 150 0.01
Single Pulse Power
0.3
V GS(th) Variance (V)
0.2
ID = 250 mA
0.1
TC = 25_C Single Pulse
0.0
-0.2 -50
0.10
1.00 Time (sec)
10.00
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05
0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)


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